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An analytical model for multi-phonon thermally activated hopping in the subthreshold conduction of reset-state phase change memory (PCM) devices is developed. The model parameters are calibrated through a statistical/correlation analysis of 45 nm PCM characteristics . Based on Monte Carlo statistical simulations, the model allows to predict the distributions of read currents in the reset state for...
In this paper we report results on PCM endurance failure characterization. We show that endurance failure is related to SET pulse features and we analyze and model SET operation to obtain a better understanding and improve endurance performance. Results give interesting insights on the crystallization process of GST material. SET obeys to a constant energy law. Fast SET pulses require high power;...
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
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