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The temperature dependence of MOSFET drain current varies with supply voltage. Two distinct voltage regions exist-a normal dependence (ND) region where an increase in temperature decreases drain current, and a reverse dependence (RD) region where an increase in temperature increases drain current. Knowledge of the temperature dependence is critical for avoiding overheating and wasted performance from...
Hybrid CMOS-SET circuit architectures, which combine the merits of SET and CMOS devices, promise to be a more practical implementation for nanometer-scale circuit design. In this work we discuss and compare two popular hybrid CMOS-SET architectures - serial and parallel - in terms of power dissipation, drivability and temperature effects. We use MIB compact model for SET devices and BSIM3v3 Spectre...
Polymorphic gates can be considered as a new reconfigurable technology capable of integrating logic functions with sensing in a single compact structure. Polymorphic gates whose logic function can be controlled by the level of the power supply voltage (Vdd) represent a special class of polymorphic gates. A new polymorphic NAND/NOR gate controlled by Vdd is presented. This gate was fabricated and utilized...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
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