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The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the...
This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs)...
In this work, we have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride by in-situ deposition method. The self-assembly silicon nanocrystals were in-situ deposited within the Si3N4 storage layer by dissociation of dichlorosilane (SiH2Cl2) gas to a high density of 9 times 1011 cm-2. This new structure exhibits larger memory windows for up to 6 V, better program/erase...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
In the fabrication of Co-Cr films using a continuous vacuum-deposition system, the incident angle of the vapor beam on the substrate affects the recording characteristics of the film with respect to the spacing loss. The spacing loss factor rises with increasing film anisotropy field Hkefr when signals are recorded and reproduced with a ring head. For Co-Cr films deposited with the angle of incidence...
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