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This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and electric filed distribution to be identified...
A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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