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Prototyping of three-dimensional integrated circuits requires annealing of silicon junction at temperature below 450 degree C. Laser-annealing is one way to locally anneal a silicon junction. We laser-annealed spin-on-glass diffusion sources and ion-implanted phosphorous junctions. The laser was part of a commercial micro-machining system. We successfully made a laser-annealed ohmic back side contact...
We report the fabrication of dilute nitride GaAsSbN/GaAs PIN detector with a cut-off wavelength over 1.5 mum. Effect of thermal annealing on the device characteristics is also presented. We found that the thermal treatment increases the acceptor concentration of the GaAsSbN epilayer. The increment leads to the change of conduction type in undoped and Si-doped GaAsSbN and results in low quantum efficiency...
Magnetic domains of sendust and FeZrN films were observed by a Type II method using a SEM (scanning electron microscope). In sendust samples, 180?? walls were always formed in the applied field direction. This magnetic domain behavior explains the isotropic magnetization process. The magnetic domains of FeZrN films with two different Hk values were compared to obtain the correlation between the anisotropy...
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