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The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the...
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
Multi-core SoC created great opportunities to increase overall system performance while keeping the power in check but also created many design challenges that designers must now overcome. The challenge of doubling performance every two years used to drive superscalar design with more functional units running concurrently or deeper pipeline racing for highest frequency at the cost of higher power...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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