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Power dissipation is a major issue with testing of designs having full scan architectures. The proposed scan technique minimizes toggle activity while scanning in test patterns. The method uses bit inversion technique to avoid toggles in scan flip-flops. The setup is dynamically configurable to one among the logic reversal structure and traditional scan while shift-in/shift-out of test patterns. Experimental...
Over the years, serial scan design has became the defacto Design for Testability (DFT) technique. The ease of testing and high test coverage has made it to gain wide spread industrial acceptance. However, there are associated penalties with serial scan. These penalties include performance degradation, test data volume, test application time, and test power dissipation. The performance overhead of...
In central inverter based photovoltaic (PV) plants, critical functions such as maximum power point tracking (MPPT) are performed on the aggregate I–V curve of all of the PV modules. The disadvantage of this approach is its inability to optimize overall output power when the operating conditions vary from one PV module to another, due to module differences (e.g. mismatch, layout, …) and shading effects...
High energy yield has been and continues to be a major driver in PV installations. With the continuous improvement in PV modules' performance, there is a need to extract as much power as possible from the modules under various weather conditions. Over the past three years, we proposed, analyzed, built, installed, and monitored a PV system with string level MPPT dc/dc converters and a central inverter...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
Polymorphic gates can be considered as a new reconfigurable technology capable of integrating logic functions with sensing in a single compact structure. Polymorphic gates whose logic function can be controlled by the level of the power supply voltage (Vdd) represent a special class of polymorphic gates. A new polymorphic NAND/NOR gate controlled by Vdd is presented. This gate was fabricated and utilized...
In this paper, we present a new technique to improve the reliability of H-tree SRAM memories. This technique deals with the SRAM power-bus monitoring by using built-in current sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the inversion of the state of...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
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