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Schottky-diodes in silicon (Si) are well-known for their problematic blocking behaviour at high temperatures and high blocking voltages. High leakage currents [1] and self-heating can lead to a thermal runaway [2] due to the fatal feedback loop of both. Devices produced of silicon carbide (SiC) are expected to avoid this problem by much lower leakage currents due to the higher Schottky barrier height...
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