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The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the...
A Trojan attack maliciously modifies, alters, or embeds unplanned components inside the exploited chips. Given the original chip specifications, and process and simulation models, the goal of Trojan detection is to identify the malicious components. This paper introduces a new Trojan detection method based on nonintrusive external IC quiescent current measurements. We define a new metric called consistency...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
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