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Scaling of CMOS technology has made major innovations in the last decade with the introduction of strained silicon and high-k metal gate, however at the same time an increasing amount of complex analog mixed-signal circuit functionality has been integrated on microprocessors and SOCs. Examples of the key analog mixed-signal circuit functional blocks implemented in advanced 45nm and 32nm logic CMOS...
High-k, metal gate devices and furthermore multi-gate FETs (MuGFETs) are considered as promising solution for scaling down to 32 nm, 22 nm and 16 nm overcoming the limitations of conventional planar bulk. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This paper discusses different examples for novel, technology related...
A leading edge 32 nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been developed to be modular, offering mix-and-match transistors, interconnects, RF/analog passive elements, embedded memory, and noise mitigation options. The low gate leakage of the high-k gate dielectric...
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