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We propose pipe-shaped bit cost scalable (P-BiCS) flash memory which consists of pipe-shaped NAND strings folded like a u-shape instead of the straight-shape. P-BiCS flash technology achieves a highly reliable memory film of which the program and erase (P/E) operation is managed by Fowler-Nordheim (FN) tunneling, that is originated by the strong curvature effect of its small pipe radius, a low resistance...
Thin film transistors (TFT) are the essential elements of flat panel display electronics. The current technology for this application based on amorphous or polycrystalline Si films has speed limitations due to low mobility of such films. As the demand for higher speed electronics increase with display size and complexity, alternative technologies are being developed based on heavy metal oxide compounds...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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