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High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7 : 3 wt. for P(VDF-TrFE) and PMMA, both p- and n-type printed...
For many applications of organic thin-film transistors (TFTs), high-capacitance gate dielectrics that can be processed at low temperature are of interest. Several approaches exist, including vapor-deposited metal oxides, ultra-thin polymers, self-assembled nanodielectrics, and thin hybrid dielectrics based on alkyl phosphonic acid self-assembled monolayers (SAMs) on plasma-oxidized aluminum gates...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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