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High-quality germanium oxynitride (GeON) gate dielectrics for Ge-based metal-oxide-semiconductor (MOS) devices were fabricated by plasma nitridation of ultrathin thermal oxides on Ge(100) substrates. Although ultrathin oxides with abrupt GeO2/Ge interfaces can be formed by conventional dry oxidation, air exposure results in serious electrical degradation. It was found that plasma nitridation forms...
The effect of constant voltage stress on Pt/La2O3/n-Ge MOS devices biased at accumulation is investigated and reported. It is found that the stress induced leakage current (SILC) initially increases due to electron charge trapping on pre-existing bulk oxide defects. After 10 s approximately, a clear decay of SILC commences which follows a t-n power law, with n lying between 0.56 and 0.75. This decay...
Excellent electrical performances have been demonstrated for the MOSCAPs and MOSFETs using Ga2O3(Gd2O3) gate dielectrics deposited at room temperature on Ge(100) without employing any interfacial layers. In this work, we report a very low interfacial density of state (Dit) of ~2times1011cm-2 eV-1, a low leakage current density (Jg) of ~10-9A/cm2, well-behaved capacitance-voltage (C-V) characteristics...
In this letter, we study the effects of sulfur (S) passivation, using aqueous ammonium sulfide ((NH4)2S), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode. Compared with control samples, the S passivation can effectively reduce both equivalent oxide thickness and interface-state density. X-ray-photoelectron-spectroscopy analysis shows that (NH...
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