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The negative bias temperature instability (NBTI) is, arguably, the single most important reliability problem in present day metal oxide silicon field effect transistor (MOSFET) technology. This paper presents a model for NBTI which is radically different from the quite widely utilized reaction diffusion models which dominate the current day NBTI literature. The proposed model is relevant to technologically...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
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