The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High-quality germanium oxynitride (GeON) gate dielectrics for Ge-based metal-oxide-semiconductor (MOS) devices were fabricated by plasma nitridation of ultrathin thermal oxides on Ge(100) substrates. Although ultrathin oxides with abrupt GeO2/Ge interfaces can be formed by conventional dry oxidation, air exposure results in serious electrical degradation. It was found that plasma nitridation forms...
The negative bias temperature instability (NBTI) is, arguably, the single most important reliability problem in present day metal oxide silicon field effect transistor (MOSFET) technology. This paper presents a model for NBTI which is radically different from the quite widely utilized reaction diffusion models which dominate the current day NBTI literature. The proposed model is relevant to technologically...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
Interface characteristics with respect to nitrogen-distribution and hydrogen-diffusion behavior were evaluated for two model tunnel oxides nitrided by NO and N2O gas, respectively. Nuclear reaction analysis reveals a different resistance of the two interfaces against the approach by H, which allows us to correlate the characteristic N-distribution of the tunnel oxide with a H-diffusion barrier. From...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.