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The thermal stability and electrical characteristics of GaN high-electron-mobility transistors (HEMTs) were investigated. Storage tests were carried out at 400°C for 48 h to study the ohmic-contact stability by means of the transmission line model. It was found that Ti/Al/Ni/Au ohmic contacts were stable and had superior thermal performance, but the Schottky contact may be more sensitive to the temperature...
SiC power devices were die bonded to a AlN/Cu/Ni(Au) direct bonded copper (DBC) substrate with a Au-Ge eutectic solder in a vacuum reflow system. The long term joint reliability of the bonded chips was evaluated at 330degC in air for up to 1600 hours. The bonded samples were inspected with a micro focus X-ray TV system. The microstructure of the samples was observed and analyzed by the scanning electron...
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