The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Experiments reveal that the breakdown-related failure of high-K stack dielectrics is affected both by percolation effects and by progressive breakdown. A model is developed for the failure distribution that includes both phenomena on equal grounds. The model is shown to be applicable in the presence of multiple breakdown spots in competition.
Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO2 gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of Tbd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface...
The efficacy of any product and process, including safety and functionality during the system lifecycle is defined by its reliability. Already essential for macro- and microsystems, reliability is even more critical in the nano realm due to expected higher functionality and complexity of products. Although reliability estimates are indispensable to validate visionary research and development of scalable,...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.