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We have examined the response of AlGaN/GaN power switching HEMTs to electrical bias stress. Three different gate stack structures were studied. In devices containing a ~ 5 nm thick AlGaN layer in the gate stack, both positive and negative shifts in the threshold voltage were observed following high blocking voltage stress, consistent with a short initial period of electron trapping followed by a longer...
Reliability issue for AlGaN/GaN HEMT is in focus of today's research, especially for high voltage operation. RF overload tests at various channel temperatures and drain bias were performed using on-probes reliability testing allowing quick feedback to technology. Two degradation mechanisms: inverse piezoelectric effect and electron trapping were recognized. Unambiguous identification of degradation...
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