The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumulation charges located in the trenches enhance the electric field in the buried oxide layer and uniform the...
Different thermal processes and substrates were used to investigate the time evolution of phosphorus loss due to segregation at the Si-SiO2 interface. Dose recovery occurred as phosphorus diffused into bulk silicon during furnace annealing. Dose loss increased when samples were cycled between silicon implantation and rapid thermal annealing (RTA). This implies that transient enhanced diffusion promotes...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.