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A new Membrane PSOI High Voltage Device with a Buried P+ layer (MBP+ PSOI) is proposed. Breakdown voltage is only decided by lateral breakdown voltage because of the entire removing of silicon substrate under the drift region and breakdown voltage can be improved with increase of the length of the drift region. Introducing of P+ layer can effectively reduce specific on-resistance and silicon window...
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumulation charges located in the trenches enhance the electric field in the buried oxide layer and uniform the...
A novel SOI high voltage device with a ring drain is developed. Junction curvature is introduced to enhance the breakdown voltage. As an example, Breakdown voltage over 600 V is achieved in a SOI LDMOS on the SOI material with 3 mum buried oxide and 20 mum silicon. Compared with normal structure, the breakdown voltage is increased by 6.74% and the on resistance is increased merely by 2.14%.The ring...
REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works...
In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our...
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