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Software-based self-test (SBST) is increasingly used for testing processor cores embedded in SoCs, mainly because it allows at-speed, low-cost testing, while requiring limited (if any) hardware modifications to the original design. However, the method requires effective techniques for generating suitable test programs and for monitoring the results. In the case of processor core testing, a particularly...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
The complexity of integrated-circuit chips produced today makes it feasible to build inexpensive, special-purpose subsystems that rapidly solve sophisticated problems on behalf of a general-purpose host computer. This paper contributes to the design methodology of efficient VLSI algorithms. We present a transformation that converts synchronous systems into more time-efficient, systolic implementations...
We consider the design of integrated circuits to implement arbitrary regular expressions. In general, we may use the McNaughton-Yamada algorithm to convert a regular expression of length n into a nondeterministic finite automaton with at most 2n states and 4n transitions. Instead of converting the nondeterministic device to a deterministic one, we propose two ways of implementing the nondeterministic...
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