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Single step growth of crystalline silicon on insulator (c-SOI) substrates based on rare earth oxide (REO) insulator layers are presented. Growth of crystalline REOs on silicon is possible due to their unique lattice matching to twice the lattice spacing of silicon. The single crystal nature of REOs make further silicon overlayer growth with moderate defect densities possible. In this paper we present...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
A bcc-Eu metal layer having a double-domain structure was grown by the molecular beam epitaxy technique on a cleaved NaCl (100) surface with the epitaxial relationship that Eu (110) [100] or [110] is parallel to NaCl (100) [100]. An epitaxial Eu/Yb superlattice was successfully prepared on this Eu buffer layer at a growth temperature of 260 K. The Yb layers in the prepared superlattices were found...
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