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In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.
As the complexity of modern RF front-end systems grows, the need for accurate models that allow effective emulation of the amplifying unit has become a key issue in analyzing, optimizing and designing high efficiency power amplifiers. These models must accurately predict both high and low frequency memory effects to fully characterize the device under test. In this context, a state-of-the-art behavioral...
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
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