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In this paper, radio frequency (RF) through-silicon via (TSV) designs and models are proposed to achieve high-frequency vertical connectivity for three dimensional (3D) multi-core and heterogeneous ICs. Specifically, coaxial dielectric and novel air-gap-based TSVs are designed and simulated to reduce signal degradation during RF operations. The simulation results demonstrate that these RF TSVs can...
The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is an emerging technology to manufacture active matrix liquid crystal displays. With the TFT's maximum frequency of oscillation fmax exceeding 3.5 GHz, it becomes feasible to develop integrated circuits (ICs) in LTPS TFT technology to facilitate system on panel or system on display. This paper investigates the LTPS TFT characteristics...
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
As CMOS scales down and sees is cost per mm2 increasing, area-aware RF design solutions are called for. Integrated inductors with multiple taps allow for low-area multi-band RF circuit design. This work reports on the design of these inductors and provides modelling and extraction procedures demonstrated on 4-port measurements. Additionally, the application of such inductors is demonstrated on a low-area...
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