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In radio frequency (RF) circuits the lumped model assumptions are often not valid anymore. To circumvent this problem, mixed-level circuit/electro-magnetic/device simulation allows the use of Maxwell's and semiconductor equations for the critical devices and lumped models for the ambient circuitry. Besides AC, DC, periodic steady state and transient analysis, the multirate partial differential equation...
A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson's equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation...
Compact models of MOSFETs are important for simulation of electronic circuits. Surface potential based compact models have become popular for sub 100 nm MOSFETs. However, these models are based on semi classical analysis. Quantum mechanical effects, important in nano-MOS devices, are added to the surface potential based models separately as corrections. In this study we have investigated the accuracy...
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