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Memristors are an attractive option for use in future memory architectures but are prone to high defect densities due to the nondeterministic nature of nanoscale fabrication. Several works discuss memristor fault models and testing. However, none of them considers the memristor as a multilevel cell (MLC). The ability of memristors to function as an MLC allows for extremely dense, low-power memories...
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
In this paper a BISR architecture for embedded memories is presented. The proposed scheme utilises a multiple bank cache-like memory for repairs. Statistical analysis is used for minimisation of the total resources required to achieve a very high fault coverage. Simulation results show that the proposed BISR scheme is characterised by high efficiency and low area overhead, even for high defect densities...
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