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As energy efficiency has become a primary concern, system designers have greater need for a flexible and highly accurate power estimation method for evaluating different architecture options. Since memory is an increasingly dominant power consumer, we reexamine existing memory power models and propose a highly efficient microcomponent-based approach with data-aware refinement for accurate system-level...
In this paper, a novel Asymptotic Probability Approximation (APA) method is proposed to estimate the overall rare probability of correlated failure events for complex circuits containing a large number of replicated cells (e.g., SRAM bit-cells). The key idea of APA is to approximate the overall circuit failure rate based on a set of carefully defined failure events. An efficient Hierarchal Subset...
We consider the general problem of the efficient and accurate determination of the yield of an integrated circuit, through electrical circuit level simulation, under variability constraints due to the manufacturing process. We demonstrate the performance of our general-purpose Importance Sampling based algorithm for the case of an industrial SRAM application. Section 1 reviews the notions of yield...
Power consumption has become a key constraint in VLSI designs. Leakage current becomes a dominant part of the total power dissipation. In addition, with technology scaling into sub-50 nm regime, one of the main design challenges in the presence of process variations is to cope with the uncertainties in timing and power. Since the leakage current is highly dominated by process variations, the statistical...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
The soft-error vulnerability of flip-flops has become an important factor in IC reliability in sub-100-nm CMOS technologies. In the present work the soft-error rate (SER) of a 65-nm flip-flop has been investigated with the use of alpha-accelerated testing. Simulations have been applied to study the flip-flop SER sensitivity in detail. Furthermore, an easy-to-use approach is presented to make an accurate...
In this paper, we investigate optimum radiation hardened by design (RHBD) for use against single-event transients (SET) using low-pass filters (LPF) including RHBD techniques against single-event upsets (SEU) for sequential logic in 45 -nm technology in a terrestrial environment. Three types of LPF were investigated regarding their SET pulse immunities, area penalties, and performance penalties. We...
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
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