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Channel Hot Carrier (CHC) and Negative Bias Temperature Instability (NBTI) degradation has been studied in pMOSFETs with and without channel strain. The results show larger CHC degradation and a neglegible influence of NBTI on strained pMOS devices. The degradation effects are modeled to be introduced in a circuit simulator. The simulations of a CMOS inverter, which has been chosen as example circuit,...
The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted...
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