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A 60 GHz power amplifier (PA) is designed in a 45 nm digital CMOS technology with inductive ESD protection at both RF input and output, and with standard foundry ESD protection for the power pads. Next to state-of-the-art RF performance, a record ESD performance of 5.3 kV HBM and >8.5 A VFTLP is measured, complying with CDM class C4.
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