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A 300 GHz integrated heterodyne receiver and transmitter for wideband communication and imaging applications have been developed in a 250 nm InP double-heterojunction bipolar transistor (DHBT) process. The receiver integrates a 300 GHz RF amplifier with a balun, a down-conversion mixer with an IF amplifier, and a local oscillator, all on a single chip. The transmitter is composed of the identical...
A single side band(SSB) 77 GHz transmitter for radar automotive applications is presented in this paper. The direct conversion transmitter consists of a SSB sub-harmonic up-convertion mixer and a 4-stage power amplifier(PA). The 38 GHz passive coupler and balun are designed to provide IQ differential LO from external input to drive the mixer. The proposed transmitter is fabricated in 65-nm CMOS. The...
Fourth-generation mobile devices use wide channel bandwidths and OFDM modulation to achieve high data rates. In particular, OFDM modulation in LTE20 creates up to 100 Resource Blocks (RB) each containing 12 subcarriers with 15kHz spacing, spread over the channel bandwidth. For an RB with frequency offset fs from the LO, transmitter non-linearity causes counter-intermodulation (CIM) products at −3f...
In this paper, we present an on-chip K-band RF front-end including 2-channel transmitter and 2-channel receiver for vehicular multi-channel radar applications using a 0.18 μm CMOS process. The transmitter is composes of a 3-stage driver amplifier (DA), two power dividers (PD), and two 2-stage DAs. Each receiver includes commonly a low noise amplifier (LNA), a mixer, a balun, a variable driver amplifier...
In this paper a millimeter-wave (MMW) Gilbert-cell up-conversion mixer using standard 130-nm CMOS technology is presented. This mixer has a power conversion gain of better than 2 dB and has the highest reported OP1dB of -5.6 dBm when driven with a LO power of 0 dBm. The LO to RF isolation is better than 37 dB for LO from 57 to 65 GHz. To the authors' knowledge, this is the first CMOS Gilbert-cell...
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