The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The performance of implant-free (IF), n-type III-V MOSFETs with an In0.75Ga0.25As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required...
Through a detailed evaluation of various dielectrics, we address the primary challenges associated with gate stacks on high electron mobility InGaAs channels. More specifically we address key gate stack issues including a) EOT scalability for high performance and electrostatic control (this work CET ~0.78 nm) with acceptable leakage both at operating and offstate for low power (this work Jg ~1 A/cm...
In this paper, the authors have demonstrated high-performance inversion-type E-mode In0.65Ga0.35As MOSFETs using ALD high-k gate dielectrics such as ALD Al2O3 and HfO2 with a maximum inversion current as high as 1.05 A/mm and a peak transconductance of 0.37 S/mm. These results suggest In-rich InGaAs could be an ideal channel material which is easy to integrate with high-k dielectrics and has a higher...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.