The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A classification scheme for III-V MOSFETs for future CMOS is proposed and n-channel devices are benchmarked both within the group of III-V MOSFETs and in comparison with state-of-the-art silicon MOSFETs. Metrics which are based on the first derivative of drain current (Id) vs gate voltage (Vgs) are found to be most suitable for benchmarking technologies of widely diverging maturity level. Although...
With the consideration of III-V channels for future CMOS, an urgent need for standard metrics to assess the maturity of III-V MOSFETs and to investigate their suitability for future CMOS has arisen. By proposing such standard metrics (Q ≡gm/S), we find that present InGaAs n-MOSFETs are trailing Si MOSFETs by over a factor of 30. Still, experimental PHEMT data make a clear case for the utilization...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.