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This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
In order to avoid a bridge shoot-through, a simultaneous on-state of both IGBTs in a bridge leg is strictly forbidden. Therefore, the complementary switch is commonly turned on with a dead-time interval to ensure a complete turn-off the other IGBT. Due to the longer tail-current interval of IGBT switching process, for the purpose of absolute safe operation, the interlocking time to is empirically...
This paper presents a hybrid switch that parallels a power MOSFET and an insulated-gate bipolar transistor (IGBT) as the main switch of a zero-voltage switching (ZVS) inverter. The combination features the MOSFET conducting in the low-current region and the IGBT conducting in the high-current region, and the soft switching avoids the reverse recovery problem during the device turn-on. A custom hybrid...
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