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Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
This paper presents the results of an experimental investigation of the performance of 300 V-5A silicon carbide Ni and W Schottky diode operating in the range between -170degC to 270degC. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
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