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The deposition process of hydrogenated microcrystalline silicon germanium (μc-SiGe:H) film is developed with Applied Materials' AKT4300 PECVD system (substrate size: 600×720mm2) at the deposition rate up to 5Å/s. The crystallinity and the chemical composition are characterized with Raman scattering spectroscopy and X-ray diffraction (XRD) analysis. The peak shift of the Si-Si transverse optic (TO)...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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