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For decades, silicon (Si)-based semiconductors were the solution for power electronics applications due to their mature technology and low manufacturing costs. However, such semiconductors seem to be approaching their limits of operation in terms of blocking voltage, working temperature, and switching speed [1]. The voltage rating of commercial Si insulated-gate bipolar transistors (IGBTs) is limited...
By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation...
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