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Resistive random access memory (RRAM) cells with a thin oxygen-deficient film topped by a Ti oxygen-gettering layer and a Pt electrode were fabricated on n-Ge layer, and the switching mechanism, as well as electrical characteristics, was explored. The RRAM cells demonstrate a stable bipolar switching behavior without the requirement of a forming process. Because of the existence...
Silicon nanowires (SiNWs) were fabricated as supporting matrices for C-reactive protein (CRP) immobilization to construct CRP quantification biosensor. Anti CRP was immobilized onto SiNWs after chemical treatments such as aldehyde or carboxyl functionalized at the surface of SiNWs. Patients' sera were systematically collected to monitor the changes of currents according to CRP concentration. For the...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
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