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A method based on Frenkel-Poole emission is proposed to model the I-V data of the amorphous state (high resistance state) in mushroom-type phase-change memory (PCM) devices. We found the I-V characteristics in the high resistance state are dominated by (i) the size of the amorphous GST (aGST) volume and (ii) the trap density of the amorphized GST material. Neither (i) nor (ii) can't be resolved by...
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