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CMOS technology has found its way in THz imaging applications. Utilizing the plasma wave theory, a MOSFET device can detect THz radiation beyond the cutoff frequency. Assisted by the system-on-packaging technique, a CMOS source delivers radiation power more effectively. An imaging system demonstrates that a low-cost CMOS solution is feasible.
Schottky-barrier diodes fabricated in CMOS without process modification are shown to be suitable for THz imaging. Two THz imagers using a 130-nm digital CMOS technology are demonstrated. A fully-integrated 280-GHz 4×4 imager array exhibits a measured NEP of 29 pW/Hz1/2 and a responsivity of 5.1kV/W (323 V/W without the amplifier). For the first time, electronic-scanning multi-pixel imaging is demonstrated...
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