The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have developed a complete process module for fabricating front end of line (FEOL) through silicon vias (TSVs). In this paper we describe the integration, which relies on using thermally deposited silicon as a sacrificial material to fill the TSV during FEOL processing, followed by its removal and replacement with tungsten after FEOL processing is complete. The uniqueness of this approach follows...
The potential of short terahertz pulses for thin-film measurements of materials opaque in the visible range is demonstrated. Layer thicknesses down to 10 mum have been determined in transmission as well as in reflection measuring mode and complex multilayer structures in the sub-wavelength range have been resolved with this technique.
Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.
Mesoporus silica dielectrics, which revealed low refractive index (n~1.26), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index anti- reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 4%. The degradation in photovoltaic efficiency of solar panels that were covered with Si3N4/MS anti-reflectors...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A thin films of crystalline Silicon Carbide (c-SiC) and amorphous Silicon Carbide (a-Si1-xCx) were grown onto p-type Si substrate by using a hot target p-type polycrystalline 6H-SiC target by both methods: Pulsed Laser Deposition (PLD) with KrF excimer laser and sputtering DC magnetron with a mixture of gas Ar:H2, respectively. The target ldquo6H-SiCrdquo used to elaborate the thin films, is realized...
Atomic layer deposition (ALD) is emerging as a promising nanotechnology for manufacturing dielectrics and insulators on microelectronics devices. Its environmental performance has to be characterized at this early development stage to achieve sustainable manufacturing in the future. In this paper, we report our environmental performance characterization studies on ALD technology through material flow...
In this paper we describe the production of nanocrystallites of silicon embedded in an amorphous silicon matrix by Hot Wire CVD. Prior modification of the substrate results in a procedure for increasing the volume fraction and density of the nano-crystallites relative to the other phases. A macroscopic process, random linear grooving, applied to the substrates has been shown to have a significant...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.