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In this paper, a new emission-based method for measuring the amplitude of on-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, which are used as local probe points for the noise. In order to demonstrate the capabilities of this technique, we discuss the results obtained for two...
Process variation is recognized as a major source of parametric yield loss, which occurs because a fraction of manufactured chips do not satisfy timing or power constraints. On the other hand, both chip performance and chip leakage power depend on supply voltage. This dependence can be used for converting the fraction of too slow or too leaky chips into good ones by adjusting their supply voltage...
The design of a suitable power gating (e.g., multithreshold or super cutoff CMOS) structure is an important and challenging task in sub-90-nm very large scale integration (VLSI) circuits where leakage currents are significant. In designs where the mode transitions are frequent, a significant amount of energy is consumed to turn on or off the power gating structure. It is thus desirable to develop...
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