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The results of development of “quasi-monolithic” two-stage power amplifier within 9-10.5 GHz bandwidth with output power in the saturation mode more than 4.0W at gain coefficient of 12.5-13 dB are presented. The experimental characteristics of designed amplifier are given.
High-performance internally-matched GaN HEMT with 0.3 mum gate length and 4times2.5 mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8 GHz. A maximum output power of 64.5 W, a gain of 7.2 dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.
AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8 GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52 mm single chip AlGaN/GaN HEMT exhibited 36.5 W CW output power with a power added efficiency (PAE) of 40.1% and power...
X-Band AlGaN/GaN HEMT power MMIC on Sl-SiC designed in microstrip technology is presented in this paper. Recessed-gate and field-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-parameter measurements show a strong dependence of the frequency performances of the AlGaN/GaN HEMTs on the operating voltage. Higher operating voltage is key to get higher power gain for...
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