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It is known that the electron tunneling from the valence band (EVB) is enhanced for SOI-MOSFETs with low Vds bias. We have modeled this phenomenon based on the surface-potential description. Our model considers the hole storage, which changes the potential distribution in the substrate. With the developed model it is demonstrated that the EVB effect can be predicted for any measurements accurately...
A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on the electrical characteristics. Closed-form expressions for the front and back-gate...
Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. An analytical model capable to describe the operation of transistors in FFE conditions would then be required in order to swiftly assess their performance and limitations. In addition, in carbon-based nanotransistors, source and drain contacts...
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