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The focus of GaN based devices has expanded beyond LEDs and lasers to the large market of power electronics where the materials properties of high electron mobility, high breakdown field and good thermal conductivity make it attractive in ultra-high efficiency applications ranging from power supplies, PV inverters to motor drives.
In this paper we compare methods to determine the life-time of AlGaN/GaN HEMTs by accelerated DC life-tests. They all base on monitoring of both, IDSS and IDQ during the life-test, either at room temperature of at the elevated ambient temperature. The goal is to investigate whether interruptions of the life test to measure IDSS at room temperature can be prevented and replaced by screening this parameter...
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