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The RF circuitry in new generation mobile handsets is continuously becoming smaller while containing more functionality. Silicon-on-sapphire (SOS) technology is an advanced active device process that eases the fabrication of advanced wireless components on very high resistivity substrates. This paper presents the basic theory and resulting trade-offs regarding RF FET switches in order to achieve a...
The proposed methodology encompasses four study phases that address the following key design aspects of integrated power modules (IPM) for voltage regulators: Fundamental switching understanding, determination of compact/accurate loss expressions and derivation of design rules, guidelines and figure of merits for converter optimisation. The applied methods are based on several modelling approaches...
This paper presents a load adaptive voltage regulator that achieves high efficiency extended to light and heavy load regions. The presented method is named as adaptive field effect transistor modulation (AFM) since multiple field effect transistors (FETs) with different characteristics (different sizes) are applied in parallel such that the number of driven FETs and their respective gate driving voltage...
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