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This paper describes the circuit and physical design features of the z196 processor chip, implemented in a 45 nm SOI technology. The chip contains 4 super-scalar, out-of-order processor cores, running at 5.2 GHz, on a die with an area of 512 mm containing an estimated 1.4 billion transistors. The core and chip design methodology and specific design features are presented, focusing on techniques...
Reliability of metal-oxide-semiconductor field-effect-transistor (MOSFET) devices is a growing concern as the scaling of these devices is increased. Major contributors to the reliability issues of MOSFET devices include negative bias temperature instability (NBTI) in p-type MOSFET. NBTI phenomena causes threshold voltage shift (increasing Vt) of pMOS devices over time. This results in slow down of...
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