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We have studied the effect of Ge-concentration in gas phase on electronic properties of GeXSiY:H alloys deposited by RF-PECVD. The relative gas phase Ge concentration was varied from [Ge]gas= 50 % to 100 %. The electronic properties of the films were studied by the measurements of temperature dependence of dark conductivity σdark (T) in the range of T= 300 to 430 K. The temperature dependence curves...
In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for characterization. Dark conductivity and Fermi energy varied...
The films studied were grown at the temperature Td= 160 °C and doped by boron (B) and phosphorus (P) by incorporation of diborane (B2H6) and phosphine (PH3), respectively, in gas mixture used for the deposition. For B-doped films changing boron concentration in gas phase CBgas from 0.04% to 0.06%, resulted in changing electrical characteristics: conductivity activation energy Ea and room-temperature...
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic...
Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. In order to utilize these test chips to measure stresses over a wide range of temperatures, one must have values of six piezoresistive coefficients for n- and p-type silicon over the temperature range of interest. However, the literature provides limited data...
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