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The design and fabrication of a monolithically integrated evanescent-coupled Ge-on-silicon-on-insulator (SOI) photodetector and CMOS circuits were realized on common SOI platform using an ??electronic-first and photonic-last?? integration approach. High-performance detector with an integrated Si waveguide was demonstrated on epitaxial Ge-absorbing layer selectively grown on an ultrathin SOI substrate...
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