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Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.
We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution...
Hybrid thin-film solar cells are fabricated on the glass substrate using ZnO nanorods, well-aligned single-crystalline Si nanowires (SiNWs), and poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) as well as micro-structured III-V semiconductors . The effect of introducing a solution-processed fullerene as an electron transport layer on the polymer/ZnO nanorod array composite...
We report the fabrication of dilute nitride GaAsSbN/GaAs PIN detector with a cut-off wavelength over 1.5 mum. Effect of thermal annealing on the device characteristics is also presented. We found that the thermal treatment increases the acceptor concentration of the GaAsSbN epilayer. The increment leads to the change of conduction type in undoped and Si-doped GaAsSbN and results in low quantum efficiency...
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