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This work presents an experimental study in order to evaluate the quality of transport in state-of-the-art gate-all-around devices. 25 nm times 20 nm times 10 nm (LxWxTSi) silicon channel devices with metal/high-k gate all-round stack were characterized electrically in terms of mobility and limiting velocity in order to evaluate the possible occurrence of ballisticity. Conclusions are finally presented...
In this research, holes mobility enhancement is studied using Silicon Germanium, SiGe technology. SiGe is deposited on silicon substrate to increase carrier mobility in the device thus will increase the drive current too. The main focus of the research is to investigate the effect of using SiGe on holes mobility. In addition, variation thicknesses of SiGe on device characteristic are also studied...
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
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